PPT Slide
Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
- Device trench penetrates silicon substrate
- Shunt path created - When ssolution ? sSi the effective cell
(path length is through the silicon rather than across
- May be beneficial: changes in chemistry at
low conductivities harder to measure
without changing electrodes (like an automatic
- Total impedence of device effected by poly resistance.
For DC current: Z = Rpoly + Rtrench
Dopant level of 1019 cm-3 ? Rpoly ? 6000 W
Maximum solution dependent R in trench ? 200,000 W
2 orders of magnitude difference - should not pose problem