Methoxy Termination Of Silicon During HF last Clean
Experiments to characterize the integrity and robustness of a methoxy termination from an MOS device standpoint.
Involves investigating a methoxy terminated surface in the presence of contaminants such as copper, and studying the Si/SiO2 interface post passivation.
Goal is to achieve ambient stability and electrical stability by using Methoxy termination in place of Hydrogen termination.