Surface Termination Post WaferCleaning

HF Last Clean

• H2SO4/H2O2 4:1 120C 10min strip organics

• DI water rinse

• HCl/ H2O2/H2O 1:1:6 90C 10min strip alkali ions and metals

• DI water rinse

• HF/ H2O 1:50 Room Temp 30sec strip native and chemical oxides

• DI water rinse

• Spin Dry

Hydrogen Termination

Modified HF Last Clean

• H2SO4/H2O2 4:1 120C 10min strip organics

• DI water rinse

• HCl/ H2O2/H2O 1:1:6 90C 10min strip alkali ions and metals

• DI water rinse

• HF/ H2O 1:50 Room Temp 30sec strip native and chemical oxides

• Methanol Rinse 2min

• Methanol/Iodine 1:2E-5

Room Temp 20min

• N2 blow dry

Methoxy Termination

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