Weekly Seminars

The one-hour ERC TeleSeminars are presented every other Thursday, dates posted below.

The presentation is also available at our new partner site, SemiNeedle, (www.semineedle.com/ERCseminars) where you can, in addition to accessing the presentation, ask questions and add comments on the presentation and connect with presenters and other attendees.

CURRENT & UPCOMING TELESEMINAR PRESENTATIONS -- 2008: Presentation Time: 11:00AM PDT / 11:00AM (Arizona) / 12:00 MDT / 1:00PM CDT / 2:00PM EDT
July 10	Host: Yoshio Nishi, Electrical Engineering, Stanford University Presentation by: Masaharu Kobayashi, Electrical Engineering, Stanford University Topic title: "Novel Contact Technology in Metal/Ge Schottky Junction for Metal Source/Drain Ge NMOSFET Application" Abstract: Non-silicon channel material, especially Ge, is one of the key technology boosters to enhance device performance. There are demonstrations of superior performance in Ge PMOSFETs to Si. Ge NMOSFETs are, however, still not superior to Si. A major obstacle for Ge NMOSFETs is the large source/drain (S/D) resistance due to poor dopant incorporation into Ge. Although metal S/D is a possible candidate to reduce S/D resistance, strong surface Fermi level pinning of Ge results in high Schottky barrier height for electrons (F_BNeff) with typical germanides, such as NiGe, TiGe, CoGe. To mitigate this problem, reduction of F_BNeff is necessary to achieve low S/D resistance in Ge NMOSFETs. In this paper, Fermi level depinning in metal/Ge Schottky junction was experimentally and systematically investigated and it is found that an ultrathin SiN successfully released Fermi level pinning and achieved very low F_BNeff. Ohmic transport was realized in metal/n-Ge Schottky junction by the interfacial layer technique. Contact resistance between different workfunction metal and n-Ge was exponentially correlated with F_BNeff,and F_BNeff was linearly modulated by changing metal workfunction with pinning factor 0.3, which proved that Fermi level pinning was released and F_BNeff can be modulated by interfacial layer, not by the nature of bulk Ge. Finally, the metal S/D Ge NMOSFET with low S/D resistance and low leakage current was successfully demonstrated. We also proposed high v_inj from a low WF metal source. This novel junction technology is feasibly integrated with high-k/metal gate and 3D-IC technologies which require low thermal budget process. Presentation: To be posted (PDF) _____________________________________ ***Dial-in # (caller paid & International): 1-630-424-4821 Please use this number if your company can cover the long distance charge; this choice will help the ERC budget and keep our cost down. International participants must use this number. *Dial-in # (toll free): 1-800-341-2320 Use this toll free number if needed; the ERC will gladly pay for the long distance charge. Participant pin code: 7638 (followed by the # sign) **NOTE: ~ Please mute your phone during the speaker's presentation to eliminate unnecessary noise over the phone lines; disengage mute for Q&A. *(If you do NOT have a mute button on your phone, use 6 to mute during the presentation; 8 to disengage)* ~ Disengage call waiting (check local phone directory for instructions). ~ Do not put the conference call on hold; "hold audio" will be disruptive to other call participants. ~ For best sound quality when using speaker phones, face the microphone when speaking; mute the phone/microphones when not speaking. ~ If possible, avoid using cellular or cordless phones which may cause unnecessary feedback or noise during the conference.
July 24	Host: Duane Boning, Massachusetts Institute of Technology Presentation by: TBA
Aug. 7	Host: David Mathine, University of Arizona Presentation by: TBA
Aug. 21	Host: Anthony Muscat, University of Arizona Presentation by: Professor Megan McEvoy, Biochemistry Department, University of Arizona

The SRC/SEMATECH Engineering Research Center for Environmentally Benign Semiconductor Manufacturing biweekly TeleSeminar Series is hosted by Center member universities: University of Arizona, Massachusetts Institute of Technology, Stanford University, University of California-Berkeley, Cornell University, Purdue University, Tufts University, Columbia University, University of Massachusetts, Arizona State University, and University of Washington. The TeleSeminars are presented biweekly and are available to participating ERC institutions, industries, and all interested parties and invited guests. The TeleSeminars, presented by ERC PIs, ERC graduate students, and invited academic and industrial guest speakers, focus on specific research efforts within current Center research relevant to the Center's mission.

The dial-in telephone number and participant code is posted with each TeleSeminar (above) as well as in all e-announcements. If you would like to be added to our distribution list, please contact the Center. If you should experience problems with any portion of the dial-in process the day of presentation, please call 520-626-5259 or 520-621-6051 (University of Arizona) for assistance.

Archived presentation materials are available to Center members only and require a password to access. Contact Karen McClure for more information.

DAYLIGHT SAVING TIME: (Begins: March 9, 2008; Ends: November 2, 2008 )
11:00AM PDT / 11:00AM PDT (Arizona) / 12:00 MDT / 1:00PM CDT / 2:00PM EDT

STANDARD TIME: (Begins: November 3, 2008; Ends: March 7, 2009)
11:00AM PST / 12:00PM MST (Arizona) / 1:00PM CST / 2:00PM EST
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For more information on the TeleSeminar Series, contact:

Karen McClure
ERC Program Coordinator Sr.
University of Arizona
Email: kmcclure@erc.arizona.edu